BC556ATA
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- Mfr.Part #
- BC556ATA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A TO92-3
- Stock
- 82,266
- In Stock ：
- 82,266
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 65V
- Length :
- 5.2mm
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Weight :
- 240mg
- Base Part Number :
- BC556
- Pbfree Code :
- yes
- Power Dissipation :
- 500mW
- Emitter Base Voltage (VEBO) :
- -5V
- Voltage - Rated DC :
- -65V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Factory Lead Time :
- 2 Weeks
- Max Breakdown Voltage :
- 65V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Published :
- 2007
- Transistor Type :
- PNP
- hFE Min :
- 110
- Packaging :
- Tape and Box (TB)
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 150MHz
- Mounting Type :
- Through Hole
- Current Rating :
- -100mA
- Max Collector Current :
- 100mA
- Mount :
- Through Hole
- Width :
- 4.19mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 500mW
- Height :
- 5.33mm
- Gain Bandwidth Product :
- 150MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Saturation Voltage :
- -250mV
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Frequency :
- 150MHz
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 65V
- Collector Base Voltage (VCBO) :
- -80V
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Terminal Position :
- BOTTOM
- Datasheets
- BC556ATA
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC556ATA Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).150MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC556ATA Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC556ATA Applications
There are a lot of ON Semiconductor
BC556ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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