BC556A
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- Mfr.Part #
- BC556A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 65V
- Stock
- 11,932
- In Stock ：
- 11,932
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Width :
- 4.19mm
- Voltage - Rated DC :
- -65V
- Published :
- 2007
- Number of Pins :
- 3
- hFE Min :
- 110
- Collector Emitter Saturation Voltage :
- -250mV
- Collector Base Voltage (VCBO) :
- -80V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Weight :
- 240mg
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Box (TB)
- Current Rating :
- -100mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transition Frequency :
- 150MHz
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 2 Weeks
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Transistor Type :
- PNP
- Height :
- 5.33mm
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage :
- 65V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Length :
- 5.2mm
- Max Breakdown Voltage :
- 65V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Power Dissipation :
- 500mW
- Base Part Number :
- BC556
- Collector Emitter Voltage (VCEO) :
- 65V
- Max Power Dissipation :
- 500mW
- Gain Bandwidth Product :
- 150MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Application :
- SWITCHING
- Frequency :
- 150MHz
- Lead Free :
- Lead Free
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Datasheets
- BC556A
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC556ATA Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).150MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC556ATA Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC556ATA Applications
There are a lot of ON Semiconductor
BC556ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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