BC550CBU
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- Mfr.Part #
- BC550CBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO92-3
- Stock
- 3,236
- In Stock ：
- 3,236
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Published :
- 2002
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 300MHz
- Collector Emitter Saturation Voltage :
- 250mV
- Terminal Form :
- Wire
- Transition Frequency :
- 300MHz
- Max Collector Current :
- 100mA
- Mount :
- Through Hole
- Packaging :
- Bulk
- Base Part Number :
- BC550
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Power Dissipation :
- 500mW
- Voltage - Rated DC :
- 45V
- Height :
- 4.58mm
- Max Power Dissipation :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Emitter Breakdown Voltage :
- 45V
- Current Rating :
- 100mA
- Length :
- 4.58mm
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Width :
- 3.86mm
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 50V
- Number of Terminations :
- 3
- Frequency :
- 300MHz
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Position :
- BOTTOM
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 179mg
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 7 Weeks
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- hFE Min :
- 110
- Collector Emitter Voltage (VCEO) :
- 45V
- Case Connection :
- Isolated
- Number of Elements :
- 1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheets
- BC550CBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC550CBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC550CBU Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC550CBU Applications
There are a lot of ON Semiconductor
BC550CBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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