BC550C
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- Mfr.Part #
- BC550C
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO92
- Stock
- 44,330
- In Stock ：
- 44,330
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 500mW
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Application :
- SWITCHING
- Terminal Form :
- Wire
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BC550
- Voltage - Rated DC :
- 45V
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 45V
- Frequency :
- 300MHz
- Width :
- 3.86mm
- hFE Min :
- 110
- Collector Emitter Saturation Voltage :
- 250mV
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 50V
- Published :
- 2002
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- Isolated
- Current Rating :
- 100mA
- Max Breakdown Voltage :
- 45V
- Packaging :
- Tape and Box (TB)
- Max Power Dissipation :
- 500mW
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Weight :
- 240mg
- JESD-609 Code :
- e3
- Length :
- 4.58mm
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 300MHz
- Height :
- 4.58mm
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 7 Weeks
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Elements :
- 1
- Transition Frequency :
- 300MHz
- Datasheets
- BC550C
,TO-226_straightlead.jpg)
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC550CTA Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).300MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC550CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC550CTA Applications
There are a lot of ON Semiconductor
BC550CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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