BC548CZL1G
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- Mfr.Part #
- BC548CZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A TO92
- Stock
- 35,976
- In Stock ：
- 35,976
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Additional Feature :
- EUROPEAN PART NUMBER
- Current Rating :
- 100mA
- JESD-609 Code :
- e1
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- hFE Min :
- 420
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500µA, 10mA
- Packaging :
- Tape and Box (TB)
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2004
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- BC548
- Peak Reflow Temperature (Cel) :
- 260
- HTS Code :
- 8541.21.00.75
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 300MHz
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transition Frequency :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Collector Emitter Saturation Voltage :
- 300mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 250mV
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 15nA
- Max Power Dissipation :
- 625mW
- Voltage - Rated DC :
- 30V
- Surface Mount :
- No
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- Datasheets
- BC548CZL1G
NPN -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC548CZL1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 500μA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.During maximum operation, collector current can be as low as 100mA volts.
BC548CZL1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC548CZL1G Applications
There are a lot of ON Semiconductor
BC548CZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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