BC548CTA
- Mfr.Part #
- BC548CTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A TO92-3
- Stock
- 86,765
- In Stock :
- 86,765
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BC548
- Collector Emitter Voltage (VCEO) :
- 30V
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 100mA
- Collector Base Voltage (VCBO) :
- 30V
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 30V
- Max Collector Current :
- 100mA
- Transistor Type :
- NPN
- Width :
- 3.86mm
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 250mV
- Max Power Dissipation :
- 500mW
- Frequency :
- 300MHz
- Published :
- 2002
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Weight :
- 240mg
- Terminal Position :
- BOTTOM
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 110
- Length :
- 4.58mm
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 30V
- Mount :
- Through Hole
- Voltage - Rated DC :
- 30V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Factory Lead Time :
- 7 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Box (TB)
- Height :
- 4.58mm
- Transition Frequency :
- 300MHz
- Power Dissipation :
- 500mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Gain Bandwidth Product :
- 300MHz
- Polarity/Channel Type :
- NPN
- Datasheets
- BC548CTA

NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC548CTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 420 @ 2mA 5V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 300MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC548CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC548CTA Applications
There are a lot of ON Semiconductor
BC548CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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