BC546CTA
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- Mfr.Part #
- BC546CTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A TO92-3
- Stock
- 1,892
- In Stock ：
- 1,892
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 65V
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 100mA
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Height :
- 4.58mm
- Factory Lead Time :
- 6 Weeks
- Published :
- 2002
- Gain Bandwidth Product :
- 300MHz
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Contact Plating :
- Tin
- Frequency :
- 300MHz
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Current Rating :
- 100mA
- Collector Base Voltage (VCBO) :
- 80V
- Pbfree Code :
- yes
- Max Power Dissipation :
- 500mW
- Base Part Number :
- BC546
- Transition Frequency :
- 300MHz
- Collector Emitter Voltage (VCEO) :
- 65V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Length :
- 4.58mm
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- 250mV
- Mount :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Transistor Element Material :
- SILICON
- hFE Min :
- 110
- Width :
- 3.86mm
- Max Breakdown Voltage :
- 65V
- Weight :
- 240mg
- Power Dissipation :
- 500mW
- JESD-609 Code :
- e3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 65V
- Datasheets
- BC546CTA
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC546CTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 300MHz.The breakdown input voltage is 65V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC546CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC546CTA Applications
There are a lot of ON Semiconductor
BC546CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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