BC546C
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- Mfr.Part #
- BC546C
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A TO92
- Stock
- 40,000
- In Stock ：
- 40,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 6 Weeks
- Contact Plating :
- Tin
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Base Part Number :
- BC546
- Weight :
- 240mg
- Radiation Hardening :
- No
- Transition Frequency :
- 300MHz
- Voltage - Rated DC :
- 65V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Max Power Dissipation :
- 500mW
- Height :
- 4.58mm
- Width :
- 3.86mm
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 80V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 65V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Max Collector Current :
- 100mA
- Published :
- 2002
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Saturation Voltage :
- 250mV
- Length :
- 4.58mm
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Power Dissipation :
- 500mW
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Frequency :
- 300MHz
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Current Rating :
- 100mA
- Number of Elements :
- 1
- hFE Min :
- 110
- Max Breakdown Voltage :
- 65V
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 300MHz
- Packaging :
- Tape and Box (TB)
- Collector Emitter Breakdown Voltage :
- 65V
- Lead Free :
- Lead Free
- Datasheets
- BC546C
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC546CTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 300MHz.The breakdown input voltage is 65V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC546CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC546CTA Applications
There are a lot of ON Semiconductor
BC546CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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