BC53PA,115
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- Mfr.Part #
- BC53PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A 3HUSON
- Stock
- 2,262
- In Stock ：
- 2,262
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Contact Plating :
- Tin
- Max Collector Current :
- 1A
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 80V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 420mW
- Collector Emitter Breakdown Voltage :
- 80V
- Pin Count :
- 3
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 145MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Transition Frequency :
- 145MHz
- Power Dissipation :
- 1.65W
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 80V
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- NO LEAD
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Factory Lead Time :
- 8 Weeks
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 420mW
- Configuration :
- Single
- Published :
- 2011
- Mount :
- Surface Mount
- Package / Case :
- 3-PowerUDFN
- Datasheets
- BC53PA,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
BC53PA,115 Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 145MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BC53PA,115 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BC53PA,115 Applications
There are a lot of Nexperia USA Inc.
BC53PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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