BC52-10PASX
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- Mfr.Part #
- BC52-10PASX
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- NEXPERIA BC52PAS - 60V, 1 A PNP
- Stock
- 1,000
- In Stock ：
- 1,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Frequency - Transition :
- 145MHz
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Reference Standard :
- AEC-Q101; IEC-60134
- Collector Emitter Voltage (VCEO) :
- 500mV
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Power - Max :
- 420mW
- Published :
- 2014
- Transistor Element Material :
- SILICON
- Terminal Form :
- NO LEAD
- Max Breakdown Voltage :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 145MHz
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- Configuration :
- Single
- Factory Lead Time :
- 20 Weeks
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- 3-UDFN Exposed Pad
- Collector Base Voltage (VCBO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 420mW
- Packaging :
- Cut Tape (CT)
- JESD-30 Code :
- S-PDSO-N3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Mounting Type :
- Surface Mount
- Datasheets
- BC52-10PASX
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-UDFN Exposed Pad Cut Tape (CT) Surface Mount
BC52-10PASX Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 145MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
BC52-10PASX Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BC52-10PASX Applications
There are a lot of Nexperia USA Inc.
BC52-10PASX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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