BC516
- Mfr.Part #
- BC516
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 1A TO92-3
- Stock
- 14,919
- In Stock :
- 14,919
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 200MHz
- Max Power Dissipation :
- 625mW
- Weight :
- 200.005886mg
- Frequency - Transition :
- 200MHz
- Width :
- 4.19mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Max Collector Current :
- 1A
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP - Darlington
- Current Rating :
- -1A
- Terminal Position :
- BOTTOM
- hFE Min :
- 30000
- Voltage :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Mount :
- Through Hole
- Voltage - Rated DC :
- -30V
- Collector Base Voltage (VCBO) :
- 40V
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Bulk
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Base Part Number :
- BC516
- Current :
- 4A
- Collector Emitter Saturation Voltage :
- 1V
- Height :
- 5.33mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30000 @ 20mA 2V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 625mW
- Polarity :
- PNP
- Published :
- 2015
- Collector Emitter Voltage (VCEO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 10V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Length :
- 5.2mm
- Continuous Collector Current :
- 1A
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheets
- BC516
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PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
Description
The BC516 is a PNP Darlington Transistor designed for applications requiring extremely high current gain at currents to 1A. The Darlington configuration, also known as a Darlington pair in electronics, is a circuit made up of two bipolar transistors with one transistor's emitter connected to the other's base, causing the current to increase by the first transistor to be amplified even more by the second. Both transistors' collectors are interconnected. Comparing this setup to each transistor alone, the current gain is significantly higher. It functions like a transistor and is frequently packaged in that way.
Features
-
-55 to 150°C Operating junction temperature range
-
This device is designed for applications reguiring extremely high current gain at currents to 1A
-
Higher switched currents
-
Available in a variety of single packages
-
A very high input impedance for the circuit
Applications
-
Power Management
-
Industrial
-
Safety
-
Amplification
-
Motors or Relays
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