BC516

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

30000

RoHS Status :

RoHS Compliant

Published :

2015

Transistor Type :

PNP - Darlington

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Length :

5.2mm

Max Collector Current :

1A

Number of Terminations :

3

Current :

4A

Continuous Collector Current :

1A

Packaging :

Bulk

Power Dissipation :

625mW

Weight :

200.005886mg

Frequency - Transition :

200MHz

Mount :

Through Hole

Transition Frequency :

200MHz

Number of Pins :

3

Voltage :

30V

Collector Emitter Breakdown Voltage :

30V

Polarity :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

625mW

Collector Base Voltage (VCBO) :

40V

Height :

5.33mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Current Rating :

-1A

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

30000 @ 20mA 2V

Number of Elements :

1

Terminal Position :

BOTTOM

Emitter Base Voltage (VEBO) :

10V

Collector Emitter Voltage (VCEO) :

30V

Collector Emitter Saturation Voltage :

1V

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

-30V

Base Part Number :

BC516

Vce Saturation (Max) @ Ib, Ic :

1V @ 100μA, 100mA

Qualification Status :

Not Qualified

Current - Collector Cutoff (Max) :

100nA ICBO

Width :

4.19mm