BC449G
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- Mfr.Part #
- BC449G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.3A TO92
- Stock
- 3,579
- In Stock ：
- 3,579
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Base Part Number :
- BC449
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 100V
- Gain Bandwidth Product :
- 200MHz
- Current Rating :
- 300mA
- Lifecycle Status :
- OBSOLETE (Last Updated: 21 hours ago)
- hFE Min :
- 50
- Collector Emitter Voltage (VCEO) :
- 250mV
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- Packaging :
- Bulk
- Transistor Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Collector Emitter Saturation Voltage :
- 125mV
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 100V
- Max Collector Current :
- 300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 2mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Mount :
- Through Hole
- Published :
- 2005
- Pin Count :
- 3
- HTS Code :
- 8541.21.00.75
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Max Power Dissipation :
- 625mW
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 200MHz
- Voltage - Rated DC :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheets
- BC449G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC449G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 125mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 300mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.
BC449G Features
the DC current gain for this device is 50 @ 2mA 5V
a collector emitter saturation voltage of 125mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 200MHz
BC449G Applications
There are a lot of ON Semiconductor
BC449G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BC447 | onsemi | 27,746 | TRANS NPN 80V 0.3A TO92 |
| BC447G | onsemi | 3,571 | TRANS NPN 80V 0.3A TO92 |
| BC449 | onsemi | 33,630 | TRANS NPN 100V 0.3A TO92 |
| BC449A | onsemi | 44,380 | TRANS NPN 100V 0.3A TO92 |
| BC449AG | onsemi | 7,148 | TRANS NPN 100V 0.3A TO92 |
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