BC368,112
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- Mfr.Part #
- BC368,112
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 20V 1A TO92-3
- Stock
- 32,229
- In Stock ：
- 32,229
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Reach Compliance Code :
- Unknown
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- VCEsat-Max :
- 0.5 V
- Number of Elements :
- 1
- Voltage - Collector Emitter Breakdown (Max) :
- 20V
- Frequency - Transition :
- 170MHz
- Power Dissipation-Max (Abs) :
- 0.83W
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 170MHz
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Current - Collector (Ic) (Max) :
- 1A
- Configuration :
- Single
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector-Base Capacitance-Max :
- 40pF
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.21.00.75
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 250
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Base Part Number :
- BC368
- Published :
- 2000
- JESD-30 Code :
- O-PBCY-T3
- Power - Max :
- 830mW
- Datasheets
- BC368,112
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC368,112 Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 170MHz.There is a 20V maximal voltage in the device due to collector-emitter breakdown.
BC368,112 Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 170MHz
BC368,112 Applications
There are a lot of NXP USA Inc.
BC368,112 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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