BC33825TA
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- Mfr.Part #
- BC33825TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A TO92-3
- Stock
- 2,252
- In Stock ：
- 2,252
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 25V
- Number of Pins :
- 3
- Width :
- 3.86mm
- Length :
- 4.58mm
- Max Collector Current :
- 800mA
- Max Breakdown Voltage :
- 25V
- Operating Temperature :
- 150°C TJ
- Frequency :
- 100MHz
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 625mW
- Max Power Dissipation :
- 625mW
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 4.58mm
- Lead Free :
- Lead Free
- hFE Min :
- 100
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 2 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Packaging :
- Tape and Box (TB)
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Base Part Number :
- BC338
- Weight :
- 240mg
- Collector Base Voltage (VCBO) :
- 10V
- Published :
- 2002
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 700mV
- Voltage - Rated DC :
- 25V
- Current Rating :
- 800mA
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 25V
- Gain Bandwidth Product :
- 100MHz
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Datasheets
- BC33825TA
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC33825TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 800mA volts.
BC33825TA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BC33825TA Applications
There are a lot of ON Semiconductor
BC33825TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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