BC338-25
- Mfr.Part #
- BC338-25
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A TO92
- Stock
- 4,000
- In Stock :
- 4,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Packaging :
- Tape and Box (TB)
- Current - Collector Cutoff (Max) :
- 100nA
- Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- Weight :
- 240mg
- Lead Free :
- Lead Free
- Height :
- 4.58mm
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 25V
- Length :
- 4.58mm
- Gain Bandwidth Product :
- 100MHz
- Base Part Number :
- BC338
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transition Frequency :
- 100MHz
- Mount :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Base Voltage (VCBO) :
- 10V
- Mounting Type :
- Through Hole
- Published :
- 2002
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 800mA
- Emitter Base Voltage (VEBO) :
- 5V
- Width :
- 3.86mm
- Qualification Status :
- Not Qualified
- Current Rating :
- 800mA
- Collector Emitter Voltage (VCEO) :
- 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- hFE Min :
- 100
- Max Power Dissipation :
- 625mW
- Power Dissipation :
- 625mW
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 25V
- Factory Lead Time :
- 2 Weeks
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 25V
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 700mV
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Datasheets
- BC338-25

NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC33825TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 800mA volts.
BC33825TA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BC33825TA Applications
There are a lot of ON Semiconductor
BC33825TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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