BC337ZL1G
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- Mfr.Part #
- BC337ZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92
- Stock
- 22,523
- In Stock ：
- 22,523
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 800mA
- HTS Code :
- 8541.21.00.75
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 625mW
- Transistor Application :
- AMPLIFIER
- Gain Bandwidth Product :
- 210MHz
- Voltage - Rated DC :
- 45V
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- RoHS Compliant
- Base Part Number :
- BC337
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Transistor Type :
- NPN
- Transition Frequency :
- 210MHz
- Additional Feature :
- EUROPEAN PART NUMBER
- Packaging :
- Tape and Box (TB)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Published :
- 2005
- JESD-30 Code :
- O-PBCY-T3
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Collector Current :
- 800mA
- hFE Min :
- 100
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Voltage (VCEO) :
- 700mV
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 700mV
- JESD-609 Code :
- e1
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Datasheets
- BC337ZL1G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC337ZL1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 210MHz.During maximum operation, collector current can be as low as 800mA volts.
BC337ZL1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 210MHz
BC337ZL1G Applications
There are a lot of ON Semiconductor
BC337ZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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