BC33740TA
- Mfr.Part #
- BC33740TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92-3
- Stock
- 29,075
- In Stock :
- 29,075
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Weight :
- 240mg
- Max Collector Current :
- 800mA
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Contact Plating :
- Tin
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Base Part Number :
- BC337
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2007
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Max Junction Temperature (Tj) :
- 150°C
- Collector Emitter Saturation Voltage :
- 700mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- hFE Min :
- 250
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Width :
- 4.19mm
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 625mW
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Max Breakdown Voltage :
- 45V
- Factory Lead Time :
- 6 Weeks
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Height :
- 8.77mm
- Collector Emitter Voltage (VCEO) :
- 45V
- Packaging :
- Tape and Box (TB)
- Length :
- 5.2mm
- Datasheets
- BC33740TA

NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC33740TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100mA 1V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 800mA volts can be achieved.
BC33740TA Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC33740TA Applications
There are a lot of ON Semiconductor
BC33740TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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