BC33740TA
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- Mfr.Part #
- BC33740TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92-3
- Stock
- 27,843
- In Stock ：
- 27,843
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Max Collector Current :
- 800mA
- Max Power Dissipation :
- 625mW
- Mounting Type :
- Through Hole
- Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Width :
- 4.19mm
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 45V
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 45V
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Height :
- 8.77mm
- Max Junction Temperature (Tj) :
- 150°C
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Contact Plating :
- Tin
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 700mV
- Element Configuration :
- Single
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 6 Weeks
- hFE Min :
- 250
- Max Breakdown Voltage :
- 45V
- Weight :
- 240mg
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 3
- Packaging :
- Tape and Box (TB)
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Pbfree Code :
- yes
- Published :
- 2007
- Length :
- 5.2mm
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Base Part Number :
- BC337
- Datasheets
- BC33740TA
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC33740TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100mA 1V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 800mA volts can be achieved.
BC33740TA Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC33740TA Applications
There are a lot of ON Semiconductor
BC33740TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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