BC33725TF
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- Mfr.Part #
- BC33725TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92-3
- Stock
- 35,309
- In Stock ：
- 35,309
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 625mW
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 2 Weeks
- Qualification Status :
- Not Qualified
- Collector Emitter Saturation Voltage :
- 700mV
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 240mg
- Published :
- 2007
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN
- hFE Min :
- 100
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 625mW
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 45V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA
- Max Collector Current :
- 800mA
- Collector Emitter Breakdown Voltage :
- 45V
- Current Rating :
- 800mA
- Gain Bandwidth Product :
- 100MHz
- Transistor Application :
- SWITCHING
- Base Part Number :
- BC337
- ECCN Code :
- EAR99
- Datasheets
- BC33725TF
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC33725TF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
BC33725TF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
BC33725TF Applications
There are a lot of ON Semiconductor
BC33725TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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