BC33725TAR

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity/Channel Type :

NPN

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 100mA 1V

Mount :

Through Hole

Emitter Base Voltage (VEBO) :

5V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Max Collector Current :

800mA

Element Configuration :

Single

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

4.58mm

Power Dissipation :

625mW

Lead Free :

Lead Free

Transistor Type :

NPN

Current Rating :

800mA

Published :

2002

Collector Emitter Breakdown Voltage :

45V

Gain Bandwidth Product :

100MHz

Number of Pins :

3

Collector Emitter Saturation Voltage :

700mV

hFE Min :

100

Collector Emitter Voltage (VCEO) :

45V

Operating Temperature :

150°C TJ

Voltage - Rated DC :

45V

Weight :

240mg

Collector Base Voltage (VCBO) :

10V

Contact Plating :

Tin

Max Breakdown Voltage :

45V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

100nA

Max Power Dissipation :

625mW

Height :

4.58mm

Frequency :

100MHz

Factory Lead Time :

2 Weeks

Base Part Number :

BC337

JESD-609 Code :

e3

Packaging :

Tape and Box (TB)

Number of Terminations :

3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Width :

3.86mm

Qualification Status :

Not Qualified

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Mounting Type :

Through Hole

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED