BC33725TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

150°C TJ

Max Power Dissipation :

625mW

Lead Free :

Lead Free

hFE Min :

100

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Published :

2007

Length :

5.2mm

Transistor Type :

NPN

Max Collector Current :

800mA

Mounting Type :

Through Hole

Number of Elements :

1

Number of Pins :

3

Power Dissipation :

625mW

Contact Plating :

Tin

Gain Bandwidth Product :

100MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

5V

Packaging :

Tape and Box (TB)

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

45V

Height :

8.77mm

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

100nA

Base Part Number :

BC337

Factory Lead Time :

6 Weeks

Width :

4.19mm

Radiation Hardening :

No

JESD-609 Code :

e3

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

Collector Emitter Saturation Voltage :

700mV

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

45V

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Frequency :

100MHz

Max Junction Temperature (Tj) :

150°C

Number of Terminations :

3

Max Breakdown Voltage :

45V

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 100mA 1V

Weight :

240mg

Polarity/Channel Type :

NPN

Pbfree Code :

yes