BC33716TA
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- Mfr.Part #
- BC33716TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92-3
- Stock
- 10,918
- In Stock ：
- 10,918
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BC337
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 100MHz
- Max Collector Current :
- 800mA
- Published :
- 2002
- Voltage - Rated DC :
- 45V
- Height :
- 4.58mm
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Terminations :
- 3
- Length :
- 4.58mm
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 45V
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 6 Weeks
- Max Power Dissipation :
- 625mW
- Width :
- 3.86mm
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Collector Emitter Voltage (VCEO) :
- 45V
- JESD-609 Code :
- e3
- Current Rating :
- 800mA
- Collector Emitter Saturation Voltage :
- 700mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN
- Power Dissipation :
- 625mW
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 10V
- Contact Plating :
- Tin
- Frequency :
- 100MHz
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- hFE Min :
- 100
- Packaging :
- Tape and Box (TB)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Application :
- SWITCHING
- Weight :
- 240mg
- Datasheets
- BC33716TA
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC33716TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 800mA volts.
BC33716TA Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
BC33716TA Applications
There are a lot of ON Semiconductor
BC33716TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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