BC337-40 B1
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- Mfr.Part #
- BC337-40 B1
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92
- Stock
- 14,280
- In Stock ：
- 14,280
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging :
- Bulk
- Current - Collector (Ic) (Max) :
- 800mA
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Transistor Type :
- NPN
- Factory Lead Time :
- 24 Weeks
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 5V
- Frequency - Transition :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2014
- Supplier Device Package :
- TO-92
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Datasheets
- BC337-40 B1
NPN -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC337-40 B1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.TO-92 is the supplier device package for this product.This device displays a 45V maximum voltage - Collector Emitter Breakdown.
BC337-40 B1G Features
the DC current gain for this device is 250 @ 100mA 5V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of TO-92
BC337-40 B1G Applications
There are a lot of Taiwan Semiconductor Corporation
BC337-40 B1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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