BC32825_J35Z

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Mfr.Part #
BC32825_J35Z
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS PNP 25V 0.8A TO92-3
Stock
33,137
In Stock :
33,137

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
25V
Number of Pins :
3
Power Dissipation :
625mW
Current - Collector Cutoff (Max) :
100nA
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 500mA
Contact Plating :
Copper, Silver, Tin
Transistor Type :
PNP
Collector Emitter Breakdown Voltage :
25V
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 100mA 1V
Max Collector Current :
800mA
Packaging :
Bulk
Element Configuration :
Single
Gain Bandwidth Product :
100MHz
RoHS Status :
RoHS Compliant
Operating Temperature :
150°C TJ
Emitter Base Voltage (VEBO) :
5V
Frequency :
100MHz
Base Part Number :
BC328
Number of Elements :
1
hFE Min :
160
Mount :
Through Hole
Max Power Dissipation :
625mW
Mounting Type :
Through Hole
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheets
BC32825_J35Z
Introducing Transistors - Bipolar (BJT) - Single onsemi BC32825_J35Z from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:150°C TJ, Base Part Number:BC328, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), BC32825_J35Z pinout, BC32825_J35Z datasheet PDF, BC32825_J35Z amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC32825_J35Z ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BC32825_J35Z


PNP 150°C TJ 100nA 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole

BC32825_J35Z Overview


This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.The maximum collector current is 800mA volts.

BC32825_J35Z Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V


BC32825_J35Z Applications


There are a lot of ON Semiconductor
BC32825_J35Z applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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