BC237BRL1
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- Mfr.Part #
- BC237BRL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO92
- Stock
- 5,994
- In Stock ：
- 5,994
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 200MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA
- Current Rating :
- 100mA
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 45V
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 1W
- Surface Mount :
- No
- Frequency :
- 200MHz
- Additional Feature :
- EUROPEAN PART NUMBER
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Contact Plating :
- Copper, Silver, Tin
- Lead Free :
- Lead Free
- Max Collector Current :
- 100mA
- Number of Pins :
- 3
- Pin Count :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transition Frequency :
- 200MHz
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 200mV
- Published :
- 2007
- hFE Min :
- 200
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- JESD-609 Code :
- e1
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Type :
- NPN
- Power Dissipation :
- 1W
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 50V
- Number of Elements :
- 1
- Base Part Number :
- BC237
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 45V
- Datasheets
- BC237BRL1
NPN -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC237BRL1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC237BRL1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC237BRL1G Applications
There are a lot of ON Semiconductor
BC237BRL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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