BAV70S135

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Rectifiers - Arrays

Radiation Hardening :

No

Min Operating Temperature :

-65°C

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Power Dissipation-Max :

0.35W

Peak Reflow Temperature (Cel) :

260

Max Forward Surge Current (Ifsm) :

500mA

Number of Terminations :

6

Forward Current :

250mA

Current - Reverse Leakage @ Vr :

500nA @ 80V

Height :

1.1mm

Diode Element Material :

SILICON

Base Part Number :

BAV70S

Number of Pins :

6

Pin Count :

6

Peak Non-Repetitive Surge Current :

4A

Average Rectified Current :

250mA

Operating Temperature - Junction :

150°C Max

Ambient Temperature Range High :

150°C

Capacitance :

1.5pF

Package / Case :

6-TSSOP, SC-88, SOT-363

Element Configuration :

Common Cathode

Max Surge Current :

4A

Diode Configuration :

2 Pair Common Cathode

Mounting Type :

Surface Mount

Forward Voltage :

1.25V

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.10.00.70

Max Repetitive Reverse Voltage (Vrrm) :

100V

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 150mA

Max Junction Temperature (Tj) :

150°C

Peak Reverse Current :

500nA

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Mount :

Surface Mount

Max Reverse Voltage (DC) :

100V

Terminal Position :

Dual

Number of Elements :

4

Current - Average Rectified (Io) :

250mA DC

Contact Plating :

Tin

Reverse Recovery Time :

4 ns

Packaging :

Tape and Reel (TR)

Reverse Voltage :

100V

Diode Type :

Standard

ECCN Code :

EAR99

Terminal Form :

Gull wing

Recovery Time :

4 ns

Published :

2007

Factory Lead Time :

4 Weeks

Max Reverse Leakage Current :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Output Current-Max :

0.25A