BAT86,113

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Mount :

Through Hole

Max Reverse Voltage (DC) :

50V

Element Configuration :

Single

Forward Current :

200mA

Max Surge Current :

5A

Number of Pins :

2

Radiation Hardening :

No

JESD-609 Code :

e3

HTS Code :

8541.10.00.70

Terminal Form :

Wire

Peak Non-Repetitive Surge Current :

5A

ECCN Code :

EAR99

Speed :

Small Signal =< 200mA (Io), Any Speed

Package / Case :

DO-204AG, DO-34, Axial

Diode Element Material :

SILICON

Number of Terminations :

2

Lead Free :

Lead Free

Contact Plating :

Tin

Published :

2002

Base Part Number :

BAT86

Forward Voltage :

900mV

Packaging :

Tape and Reel (TR)

Mounting Type :

Through Hole

Number of Elements :

1

Min Operating Temperature :

-65°C

Reference Standard :

CECC50001-059

Max Repetitive Reverse Voltage (Vrrm) :

50V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature - Junction :

125°C Max

Pin Count :

2

Reverse Recovery Time :

4 ns

Max Forward Surge Current (Ifsm) :

5A

Current - Reverse Leakage @ Vr :

5μA @ 40V

REACH SVHC :

No SVHC

Max Operating Temperature :

125°C

Recovery Time :

4 ns

Voltage - Forward (Vf) (Max) @ If :

900mV @ 100mA

Case Connection :

Isolated

Capacitance @ Vr, F :

8pF @ 1V 1MHz

Current - Average Rectified (Io) :

200mA DC

Diode Type :

Schottky

Factory Lead Time :

6 Weeks

Average Rectified Current :

200mA

Max Reverse Leakage Current :

5μA