BAS321115
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- Mfr.Part #
- BAS321115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-76, SOD-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BAS321 - RECTIFIER
- Stock
- 9,300
- In Stock ：
- 9,300
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Base Part Number :
- BAS321
- Average Rectified Current :
- 250mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 300mW
- Contact Plating :
- Tin
- HTS Code :
- 8541.10.00.70
- Max Operating Temperature :
- 150°C
- Operating Temperature - Junction :
- 150°C Max
- Forward Voltage :
- 1.25V
- Number of Terminations :
- 2
- Max Surge Current :
- 9A
- Capacitance @ Vr, F :
- 2pF @ 0V 1MHz
- Max Reverse Voltage (DC) :
- 200V
- Number of Pins :
- 2
- Width :
- 1.35mm
- Recovery Time :
- 50 ns
- Number of Elements :
- 1
- Current :
- 25A
- Packaging :
- Tape and Reel (TR)
- Reverse Recovery Time :
- 50 ns
- Max Repetitive Reverse Voltage (Vrrm) :
- 250V
- RoHS Status :
- ROHS3 Compliant
- Forward Current :
- 250mA
- Pin Count :
- 2
- Peak Reverse Current :
- 100nA
- Max Forward Surge Current (Ifsm) :
- 9A
- REACH SVHC :
- No SVHC
- Current - Average Rectified (Io) :
- 250mA DC
- Mount :
- Surface Mount
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Diode Element Material :
- SILICON
- Published :
- 1999
- Lead Free :
- Lead Free
- Reference Standard :
- IEC-60134
- Peak Non-Repetitive Surge Current :
- 9A
- JESD-609 Code :
- e3
- Height :
- 1.05mm
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Voltage :
- 250V
- Reverse Voltage :
- 250V
- ECCN Code :
- EAR99
- Voltage - Forward (Vf) (Max) @ If :
- 1.25V @ 200mA
- Diode Type :
- Standard
- Length :
- 1.8mm
- Current - Reverse Leakage @ Vr :
- 100nA @ 200V
- Package / Case :
- SC-76, SOD-323
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Weight :
- 4.535924g
- Power Dissipation :
- 300mW
- Datasheets
- BAS321115
Specialized ICs NXP Semiconductors BAS321,115 Overview
The Specialized ICs NXP Semiconductors BAS321,115 is a high-performance, fast recovery diode, optimized for applications demanding low power loss and high efficiency. This device features a reverse voltage of up to 250V and an average rectified current of 250mA, making it ideal for high-density mounting where size and power efficiency are critical. With a maximum forward current of 250mA and power dissipation of 300mW, this diode is designed to handle significant energy efficiently. Additionally, its capability to manage a surge current up to 9A, combined with a low leakage current of just 100nA at 200V, highlights its reliability and robustness in challenging environments. This makes the BAS321,115 an indispensable component in sophisticated electronic assemblies where precise power management is required.
Specialized ICs NXP Semiconductors BAS321,115 Key Features
An average rectified current of 250mA, ensuring adequate throughput for high-efficiency applications.
Minimal power loss manifested as 300mW of heat, optimizing the system's energy efficiency.
A peak reverse current of only 100nA, minimizing leakage and enhancing overall device performance.
Specialized ICs NXP Semiconductors BAS321,115 Applications
The BAS321,115 diode is widely used across a range of industrial and consumer applications. It is particularly effective in:
- DC motor control and drives
- Battery chargers
- Welders
- Power converters
- Reverse Polarity Protection
- Ultra High-Speed Switching
- Freewheeling
- Polarity Protection Diode
- Recirculating Diode
- Switching Diode
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