BAS321,115

Manufacturer :

Nexperia

Product Category :

Diodes - Rectifiers - Single

Element Configuration :

Single

Peak Non-Repetitive Surge Current :

9A

Capacitance @ Vr, F :

2pF @ 0V 1MHz

Current - Reverse Leakage @ Vr :

100nA @ 200V

Max Operating Temperature :

150°C

Recovery Time :

50 ns

Max Reverse Voltage (DC) :

200V

Number of Pins :

2

Min Operating Temperature :

-65°C

RoHS Status :

ROHS3 Compliant

Current :

25A

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 200mA

Forward Current :

250mA

Max Power Dissipation :

300mW

Published :

1999

Power Dissipation :

300mW

Pin Count :

2

Forward Voltage :

1.25V

Radiation Hardening :

No

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Forward Surge Current (Ifsm) :

9A

Reverse Voltage :

250V

Factory Lead Time :

4 Weeks

Length :

1.8mm

Average Rectified Current :

250mA

Mounting Type :

Surface Mount

Contact Plating :

Tin

Peak Reverse Current :

100nA

Weight :

4.535924g

Operating Temperature - Junction :

150°C Max

Max Repetitive Reverse Voltage (Vrrm) :

250V

REACH SVHC :

No SVHC

Mount :

Surface Mount

Height :

1.05mm

Max Surge Current :

9A

Base Part Number :

BAS321

Reverse Recovery Time :

50 ns

ECCN Code :

EAR99

Width :

1.35mm

Voltage :

250V

Current - Average Rectified (Io) :

250mA DC

Number of Elements :

1

JESD-609 Code :

e3

HTS Code :

8541.10.00.70

Diode Element Material :

SILICON

Terminal Form :

Gull wing

Package / Case :

SC-76, SOD-323

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Reference Standard :

IEC-60134

Number of Terminations :

2

Diode Type :

Standard

Lead Free :

Lead Free