BAS116LT3G
- Mfr.Part #
- BAS116LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- DIODE GEN PURP 75V 200MA SOT23-3
- Stock
- 3,324
- In Stock :
- 3,324
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- Manufacturer :
- onsemi
- Product Category :
- Diodes - Rectifiers - Single
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Forward Voltage :
- 1.25V
- JESD-609 Code :
- e3
- HTS Code :
- 8541.10.00.70
- Capacitance @ Vr, F :
- 2pF @ 0V 1MHz
- Reverse Recovery Time :
- 3 μs
- Element Configuration :
- Single
- Diode Type :
- Standard
- Diode Element Material :
- SILICON
- Number of Pins :
- 3
- Max Surge Current :
- 500mA
- Lead Free :
- Lead Free
- Max Reverse Leakage Current :
- 5nA
- Pbfree Code :
- yes
- Min Operating Temperature :
- -55°C
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Max Repetitive Reverse Voltage (Vrrm) :
- 75V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 300mW
- Current - Reverse Leakage @ Vr :
- 5nA @ 75V
- Max Operating Temperature :
- 150°C
- Voltage - Forward (Vf) (Max) @ If :
- 1.25V @ 150mA
- Average Rectified Current :
- 200mA
- Mounting Type :
- Surface Mount
- Speed :
- Small Signal =< 200mA (Io), Any Speed
- Operating Temperature - Junction :
- -55°C~150°C
- Halogen Free :
- Halogen Free
- Packaging :
- Tape and Reel (TR)
- Recovery Time :
- 3 μs
- ECCN Code :
- EAR99
- Forward Current :
- 200mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Reverse Voltage (DC) :
- 75V
- Peak Reverse Current :
- 5nA
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Peak Non-Repetitive Surge Current :
- 500mA
- Max Power Dissipation :
- 300mW
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Output Current-Max :
- 0.2A
- Base Part Number :
- BAS116
- Contact Plating :
- Tin
- Current - Average Rectified (Io) :
- 200mA DC
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- BAS116LT3G

Standard Diode Rectifier Small Signal =< 200mA (Io), Any Speed 1.25V @ 150mA -55°C~150°C 5nA @ 75V 3-Termination Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3 Surface Mount
BAS116LT3G Overview
A maximum reverse leakage current of 5nA volts is produced by this device.This device has an average rectified current of 200mA volts.As an unwanted derivative of its primary action, this electronic or electrical device produces 300mW heat.Forward current is allowed to reach a value of zero.The least amount of 300mW heat is generated by electronic or electrical devices (loss of energy).Surge currents can be used up to 500mA.The maximum output current is 0.2A.Datasheets indicate that the peak reverse is 5nA.
BAS116LT3G Features
a maximal reverse leakage current of 5nA volts
an average rectified current of 200mA volts
the least amount of 300mW heat (energy loss)
0.2A is the maximum value
the peak reverse is 5nA
BAS116LT3G Applications
There are a lot of ON Semiconductor
BAS116LT3G applications of single-phase diode rectifier.
- DC motor control and drives
- Battery chargers
- Welders
- Power converters
- Reverse Polarity Protection
- Ultra High-Speed Switching
- Freewheeling
- Polarity Protection Diode
- Recirculating Diode
- Switching Diode
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