BAS116LT1

Manufacturer :

onsemi

Product Category :

Diodes - Rectifiers - Single

JESD-609 Code :

e3

Number of Pins :

3

Termination :

SMD/SMT

Max Repetitive Reverse Voltage (Vrrm) :

75V

Length :

3.0226mm

Capacitance @ Vr, F :

2pF @ 0V 1MHz

Speed :

Small Signal =< 200mA (Io), Any Speed

Diode Type :

Standard

Operating Temperature - Junction :

-55°C~150°C

Current Rating :

200mA

Current - Reverse Leakage @ Vr :

5nA @ 75V

Max Power Dissipation :

225mW

Mounting Type :

Surface Mount

Terminal Position :

Dual

Contact Plating :

Tin

Min Operating Temperature :

-55°C

REACH SVHC :

No SVHC

Voltage - Rated DC :

75V

Max Forward Surge Current (Ifsm) :

500mA

Terminal Form :

Gull wing

Base Part Number :

BAS116

Element Configuration :

Single

Halogen Free :

Halogen Free

Output Current :

200mA

HTS Code :

8541.10.00.70

Packaging :

Cut Tape (CT)

Forward Voltage :

1.25V

Peak Non-Repetitive Surge Current :

500mA

Time@Peak Reflow Temperature-Max (s) :

40

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Height :

1.016mm

Width :

1.397mm

Recovery Time :

3 μs

ECCN Code :

EAR99

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Forward Current :

200mA

Pin Count :

3

Pbfree Code :

yes

Power Dissipation :

300mW

Max Surge Current :

500mA

Peak Reverse Current :

5nA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Elements :

1

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 150mA

Current - Average Rectified (Io) :

200mA DC

Max Reverse Voltage (DC) :

75V

Factory Lead Time :

5 Weeks

Lead Free :

Lead Free

Number of Terminations :

3

Radiation Hardening :

No

Diode Element Material :

SILICON

Reverse Recovery Time :

3 μs

Peak Reflow Temperature (Cel) :

260

Capacitance :

2pF

Published :

2004

Average Rectified Current :

200mA