BAP70-02,115

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Mfr.Part #
BAP70-02,115
Manufacturer
NXP Semiconductors
Package / Case
SC-79, SOD-523
Datasheet
Download
Description
RF DIODE PIN 50V 415MW SOD523
Stock
6,125
In Stock :
6,125

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Manufacturer :
NXP Semiconductors
Product Category :
Diodes - RF
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Diode Element Material :
SILICON
Packaging :
Tape and Reel (TR)
Minority Carrier Lifetime-Nom :
1.25 µs
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
SC-79, SOD-523
Surface Mount :
yes
JESD-30 Code :
R-PDSO-F2
Power Dissipation-Max :
415mW
Pin Count :
2
Additional Feature :
High Voltage
Diode Res Test Frequency :
100MHz
Diode Capacitance-Max :
0.25pF
Operating Temperature :
-65°C~150°C TJ
Application :
Attenuator
Number of Elements :
1
Terminal Form :
Flat
Capacitance @ Vr, F :
0.25pF @ 20V 1MHz
Diode Res Test Current :
0.5mA
Number of Terminations :
2
Terminal Position :
Dual
Current - Max :
100mA
Base Part Number :
BAP70
Voltage - Peak Reverse (Max) :
50V
Breakdown Voltage-Min :
50V
Diode Capacitance-Nom :
0.57pF
Diode Type :
PIN - Single
Peak Reflow Temperature (Cel) :
260
Factory Lead Time :
13 Weeks
HTS Code :
8541.10.00.70
Resistance @ If, F :
1.9Ohm @ 100mA 100MHz
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Datasheets
BAP70-02,115
Introducing Diodes - RF NXP Semiconductors BAP70-02,115 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SC-79, SOD-523, Operating Temperature:-65°C~150°C TJ, Number of Terminations:2, Base Part Number:BAP70, BAP70-02,115 pinout, BAP70-02,115 datasheet PDF, BAP70-02,115 amp .Beyond Diodes - RF NXP Semiconductors BAP70-02,115 ,we also offer SMP1330-005LF, SMS3923-081LF, MA4P7438-287T, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BAP70-02,115


PIN - Single 0.25pF @ 20V 1MHz -65°C~150°C TJ 2 Terminations SILICON 260 DUAL Tape & Reel (TR) SC-79, SOD-523

BAP70-02,115 Overview


In this device, the maximum current is 100mA mA.Based on its applicable specifications, this device operates at 50V peak reverse voltage.The device may occasionally operate at the lowest breakdown voltage possible, which is 50V.

BAP70-02,115 Features


from a maximum current of 100mA volts
at its lowest breakdown voltage of 50V


BAP70-02,115 Applications


There are a lot of NXP USA Inc.
BAP70-02,115 applications of RF diodes.


  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
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