BAP1321-04,215

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - RF

Diode Res Test Frequency :

100MHz

Terminal Form :

Gull wing

HTS Code :

8541.10.00.70

Minority Carrier Lifetime-Nom :

0.5 µs

Diode Type :

PIN - 1 Pair Series Connection

Number of Elements :

2

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Frequency Band :

S B

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

250mW

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Application :

ATTENUATOR; SWITCHING

Current - Max :

100mA

Pin Count :

3

Published :

2001

Capacitance @ Vr, F :

0.325pF @ 20V 1MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Surface Mount :

yes

Diode Element Material :

SILICON

Diode Capacitance-Max :

0.45pF

JEDEC-95 Code :

TO-236AB

Number of Terminations :

3

Base Part Number :

BAP1321-04

Diode Res Test Current :

0.5mA

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-65°C~150°C TJ

Resistance @ If, F :

1.3Ohm @ 100mA 100MHz

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G3

Diode Capacitance-Nom :

0.42pF

Voltage - Peak Reverse (Max) :

60V

Breakdown Voltage-Min :

60V