AT25160B-MAPDGV-T

Manufacturer :

Microchip Technology

Product Category :

Memory

Number of Words :

2048 words

Series :

Automotive, AEC-Q100

Technology :

EEPROM

Supply Voltage-Min (Vsup) :

2.5 V

Base Product Number :

AT25160

Seated Height-Max :

0.6 mm

Width :

2 mm

Product Status :

Active

Voltage - Supply :

2.5V~5.5V

Memory Size :

16Kb 2K x 8

Number of Functions :

1

Operating Temperature :

-40°C~125°C TA

Terminal Position :

Dual

Memory Organization :

2K x 8

Surface Mount :

yes

Package :

Tape and Reel (TR)

Write Cycle Time - Word, Page :

5ms

RoHS Status :

RoHS Compliant

Package / Case :

8-UFDFN Exposed Pad

Clock Frequency :

5MHz

Memory Format :

EEPROM

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-N8

Supplier Device Package :

8-UDFN (2x3)

Memory Type :

Non-Volatile

Terminal Form :

NO LEAD

Memory Width :

8

Supply Voltage-Max (Vsup) :

5.5 V

Serial Bus Type :

SPI

Length :

3 mm

Supply Current-Max :

0.007 mA

Manufacturer :

Microchip Technology Inc

Memory IC Type :

EEPROM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Pitch :

0.5 mm

Number of Terminals :

8

Write Cycle Time-Max (tWC) :

5 ms

Output Characteristics :

3-STATE

Parallel/Serial :

Serial

Standby Current-Max :

0.000009 A

Endurance :

1000000 Write/Erase Cycles

Data Retention Time-Min :

100

Packaging :

Tape and Reel (TR)

Operating Mode :

SYNCHRONOUS

Write Protection :

HARDWARE/SOFTWARE

Reach Compliance Code :

Compliant

Organization :

2KX8

Package Shape :

RECTANGULAR

Memory Density :

16384 bit

Programming Voltage :

5 V

Temperature Grade :

Automotive

Screening Level :

AEC-Q100

Memory Interface :

SPI