AS4C8M16S-6TCN

Manufacturer :

Alliance Memory, Inc.

Product Category :

Memory

I/O Type :

COMMON

Refresh Cycles :

4096

Operating Supply Voltage :

3.3V

Memory Type :

Volatile

Supply Current-Max :

0.14mA

Memory Interface :

Parallel

ECCN Code :

EAR99

Published :

2012

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Output Characteristics :

3-STATE

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Clock Frequency :

166MHz

Surface Mount :

yes

Supply Voltage-Max (Vsup) :

3.6V

Number of Functions :

1

Length :

22.22mm

JESD-609 Code :

e3/e6

Voltage - Supply :

3V~3.6V

Number of Pins :

54

Additional Feature :

CAS BEFORE RAS/SELF REFRESH/AUTO REFRESH

Memory Size :

128Mb 8M x 16

Supply Voltage-Min (Vsup) :

3V

Memory Width :

16

Supply Voltage :

3.3V

Terminal Position :

Dual

Terminal Pitch :

0.8mm

Write Cycle Time - Word, Page :

2ns

Number of Terminations :

54

Peak Reflow Temperature (Cel) :

260

Data Bus Width :

16b

Sequential Burst Length :

1248FP

Pin Count :

54

Address Bus Width :

12b

Radiation Hardening :

No

Access Time :

5ns

Pbfree Code :

yes

Package / Case :

54-TSOP (0.400, 10.16mm Width)

Density :

128 Mb

Number of Ports :

1

Time@Peak Reflow Temperature-Max (s) :

40

Organization :

8MX16

Interleaved Burst Length :

1248

Height Seated (Max) :

1.2mm

RoHS Status :

RoHS Compliant

Memory Format :

DRAM

Standby Current-Max :

0.002A

Terminal Finish :

PURE MATTE TIN/TIN BISMUTH

Operating Temperature :

0°C~70°C TA

Packaging :

Tray