AS4C8M16D1-5TINTR
- Mfr.Part #
- AS4C8M16D1-5TINTR
- Manufacturer
- Alliance Memory, Inc.
- Package / Case
- 66-TSSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PAR 66TSOP II
- Stock
- 16,086
- In Stock :
- 16,086
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- Manufacturer :
- Alliance Memory, Inc.
- Product Category :
- Memory
- HTS Code :
- 8542.32.00.02
- RoHS Status :
- RoHS Compliant
- Number of Ports :
- 1
- Surface Mount :
- yes
- Number of Pins :
- 66
- Write Cycle Time - Word, Page :
- 15ns
- Organization :
- 8MX16
- Additional Feature :
- AUTO/SELF REFRESH
- Density :
- 128 Mb
- Memory Width :
- 16
- Terminal Pitch :
- 0.65mm
- Published :
- 2013
- Voltage - Supply :
- 2.3V~2.7V
- Address Bus Width :
- 12b
- Access Time :
- 700ps
- Height Seated (Max) :
- 1.2mm
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Clock Frequency :
- 200MHz
- Supply Voltage-Max (Vsup) :
- 2.625V
- Memory Size :
- 128Mb 8M x 16
- ECCN Code :
- EAR99
- Memory Interface :
- Parallel
- Terminal Finish :
- PURE MATTE TIN/TIN BISMUTH
- Operating Supply Voltage :
- 2.5V
- Mounting Type :
- Surface Mount
- Data Bus Width :
- 16b
- Operating Temperature :
- -40°C~85°C TA
- Pin Count :
- 66
- Memory Format :
- DRAM
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Supply Voltage-Min (Vsup) :
- 2.375V
- Package / Case :
- 66-TSSOP (0.400, 10.16mm Width)
- Number of Terminations :
- 66
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Number of Functions :
- 1
- Terminal Position :
- Dual
- Length :
- 22.22mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3/e6
- Supply Voltage :
- 2.5V
- Memory Type :
- Volatile
- Datasheets
- AS4C8M16D1-5TINTR

Memory Alliance Memory, Inc. AS4C8M16D1-5TINTR Overview
The Memory Alliance Memory, Inc. AS4C8M16D1-5TINTR DRAM represents a robust and high-performance solution for advanced computing needs. Offering a sizeable 128Mbit capacity, this memory module is designed to meet the rigorous demands of both industrial and commercial applications. Engineered in a compact 66TSOP II package, it provides optimal thermal stability and reliability for critical operations. Its ability to operate at a nominal 5V makes it versatile for integration across various hardware configurations, thus making it an ideal choice for manufacturers looking to enhance system capabilities while maintaining cost-effectiveness.
AS4C8M16D1-5TINTR Features
This DRAM module is characterized by its high-speed data processing capabilities and durability. It features a parallel interface, which ensures efficient communication and data throughput, reducing latency and boosting overall system performance. The design focus is on energy efficiency and reduced power consumption, making it suitable for devices that require sustained performance over long periods.
AS4C8M16D1-5TINTR Applications
- Consumer Electronics: Utilized in devices such as digital cameras and audio players where high memory bandwidth and capacity are essential for user functionality and experience.
- Computing: Ideal for desktops, laptops, and servers where dependable memory is critical for system stability and multitasking capabilities.
- Embedded Systems: Used in automotive and industrial machine controls, where the ability to handle complex processes and operate reliably in extreme conditions is paramount.
- Telecommunications: Serves in communication hardware like routers and switches, aiding in the handling of high-speed data transfers and real-time processing.
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