AS4C8M16D1-5TIN

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Mfr.Part #
AS4C8M16D1-5TIN
Manufacturer
Alliance Memory, Inc.
Package / Case
66-TSSOP (0.400, 10.16mm Width)
Datasheet
Download
Description
IC DRAM 128MBIT PAR 66TSOP II
Stock
21,296
In Stock :
21,296

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Manufacturer :
Alliance Memory, Inc.
Product Category :
Memory
Width :
10.29mm
Number of Terminations :
66
Additional Feature :
AUTO/SELF REFRESH
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
40
Package / Case :
66-TSSOP (0.400, 10.16mm Width)
Organization :
8MX16
Memory Format :
DRAM
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Peak Reflow Temperature (Cel) :
260
Length :
22.35mm
Voltage - Supply :
2.3V~2.7V
Pbfree Code :
yes
Supply Voltage-Max (Vsup) :
2.625V
RoHS Status :
RoHS Compliant
Data Bus Width :
16b
Memory Interface :
Parallel
HTS Code :
8542.32.00.02
ECCN Code :
EAR99
Memory Size :
128Mb 8M x 16
Operating Supply Voltage :
2.5V
Number of Pins :
66
Number of Functions :
1
Access Time :
700ps
Terminal Position :
Dual
Data Rate :
400 Mbps
Terminal Finish :
PURE MATTE TIN/TIN BISMUTH
Terminal Pitch :
0.65mm
Supply Voltage :
2.5V
Supply Voltage-Min (Vsup) :
2.375V
Address Bus Width :
12b
Packaging :
Tray
Pin Count :
66
Published :
2013
JESD-609 Code :
e3/e6
Write Cycle Time - Word, Page :
15ns
Mount :
Surface Mount
Radiation Hardening :
No
Clock Frequency :
200MHz
Operating Temperature :
-40°C~85°C TA
Height :
1.1mm
Memory Type :
Volatile
Density :
128 Mb
Number of Ports :
1
Datasheets
AS4C8M16D1-5TIN
Introducing Memory Alliance Memory, Inc. AS4C8M16D1-5TIN from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:66, Mounting Type:Surface Mount, Package / Case:66-TSSOP (0.400, 10.16mm Width), Number of Pins:66, Operating Temperature:-40°C~85°C TA, AS4C8M16D1-5TIN pinout, AS4C8M16D1-5TIN datasheet PDF, AS4C8M16D1-5TIN amp .Beyond Memory Alliance Memory, Inc. AS4C8M16D1-5TIN ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Alliance Memory, Inc. AS4C8M16D1-5TIN


Memory Alliance Memory, Inc. AS4C8M16D1-5TIN Overview

Introducing the cutting-edge AS4C8M16D1-5TIN Integrated Circuit Dynamic Random Access Memory (DRAM) module by Alliance Memory, Inc. This high-performance memory solution is meticulously crafted to meet the demands of modern electronics, offering a remarkable 128MBIT capacity housed in a compact PAR 66TSOP II package. Designed with precision and expertise, this DRAM module sets a new standard in memory technology, delivering unparalleled reliability and efficiency for a diverse range of applications.

AS4C8M16D1-5TIN Features

  • 128MBIT DRAM module
  • PAR 66TSOP II package
  • High-performance design
  • Reliable and efficient operation
  • Manufactured by Alliance Memory, Inc.

AS4C8M16D1-5TIN Applications

  • Industrial Automation Systems: The AS4C8M16D1-5TIN DRAM module is ideal for industrial automation systems, providing the necessary memory capacity and performance for real-time data processing and control tasks.
  • Networking Equipment: Enhance the performance of networking equipment such as routers and switches with the high-speed and reliable AS4C8M16D1-5TIN DRAM module, ensuring seamless data transmission and management.
  • Telecommunication Devices: From base stations to communication servers, the AS4C8M16D1-5TIN DRAM module delivers exceptional reliability and efficiency, enabling uninterrupted operation of telecommunication devices in demanding environments.
  • Embedded Systems: Power your embedded systems with the AS4C8M16D1-5TIN DRAM module, ensuring swift and reliable data storage and retrieval for a wide range of applications including automotive electronics, medical devices, and consumer electronics.
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