AS4C4M16S-6TAN

Manufacturer :

Alliance Memory, Inc.

Product Category :

Memory

Supply Voltage-Min (Vsup) :

3V

Voltage - Supply :

3V~3.6V

JESD-609 Code :

e3/e6

Memory Width :

16

Supply Voltage :

3.3V

Operating Supply Voltage :

3.3V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Lead Free :

Lead Free

Access Time :

5.4ns

Series :

Automotive, AEC-Q100

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

SYNCHRONOUS

ECCN Code :

EAR99

Memory Format :

DRAM

Max Supply Current :

85mA

Operating Temperature :

-40°C~105°C TA

Terminal Position :

Dual

Memory Type :

Volatile

Number of Functions :

1

Mounting Type :

Surface Mount

Surface Mount :

yes

Height Seated (Max) :

1.2mm

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Terminal Finish :

PURE MATTE TIN/TIN BISMUTH

Terminal Pitch :

0.8mm

Supply Voltage-Max (Vsup) :

3.6V

Additional Feature :

AUTO/SELF REFRESH

Density :

64 Mb

Pin Count :

54

Number of Ports :

1

Organization :

4MX16

Length :

22.22mm

Memory Interface :

Parallel

Number of Pins :

54

Data Bus Width :

16b

Write Cycle Time - Word, Page :

2ns

Package / Case :

54-TSOP (0.400, 10.16mm Width)

Packaging :

Tray

Number of Terminations :

54

Address Bus Width :

14b

Clock Frequency :

166MHz

Published :

2012

Memory Size :

64Mb 4M x 16

Peak Reflow Temperature (Cel) :

260