AS4C32M16D2-25BINTR

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Mfr.Part #
AS4C32M16D2-25BINTR
Manufacturer
Alliance Memory, Inc.
Package / Case
84-TFBGA
Datasheet
Download
Description
IC DRAM 512MBIT PARALLEL 84TFBGA
Stock
43,764
In Stock :
43,764

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Manufacturer :
Alliance Memory, Inc.
Product Category :
Memory
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Operating Supply Voltage :
1.8V
Radiation Hardening :
No
Memory Size :
512Mb 32M x 16
Output Characteristics :
3-STATE
Memory Format :
DRAM
Operating Temperature :
-40°C~95°C TC
Packaging :
Tape and Reel (TR)
Write Cycle Time - Word, Page :
15ns
Density :
512 Mb
Access Time :
400ps
Interleaved Burst Length :
48
Mounting Type :
Surface Mount
Memory Width :
16
Number of Pins :
84
Package / Case :
84-TFBGA
Data Bus Width :
16b
RoHS Status :
RoHS Compliant
Voltage - Supply :
1.7V~1.9V
Supply Current-Max :
0.2mA
Sequential Burst Length :
48
Organization :
32MX16
Refresh Cycles :
8192
Lead Free :
Lead Free
I/O Type :
COMMON
Surface Mount :
yes
Address Bus Width :
13b
Memory Interface :
Parallel
Standby Current-Max :
0.008A
Clock Frequency :
400MHz
Terminal Position :
BOTTOM
Published :
2013
Terminal Pitch :
0.8mm
Number of Terminations :
84
Memory Type :
Volatile
Supply Voltage :
1.8V
Introducing Memory Alliance Memory, Inc. AS4C32M16D2-25BINTR from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~95°C TC, Mounting Type:Surface Mount, Number of Pins:84, Package / Case:84-TFBGA, Number of Terminations:84, AS4C32M16D2-25BINTR pinout, AS4C32M16D2-25BINTR datasheet PDF, AS4C32M16D2-25BINTR amp .Beyond Memory Alliance Memory, Inc. AS4C32M16D2-25BINTR ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Alliance Memory, Inc. AS4C32M16D2-25BINTR


Memory Alliance Memory, Inc. AS4C32M16D2-25BINTR Overview

The Memory Alliance Memory, Inc. AS4C32M16D2-25BINTR is a high-capacity, dynamic random-access memory (DRAM) designed for applications requiring fast and reliable data storage and retrieval. This IC DRAM module features a 512Mbit density and is packaged in a compact 84TFBGA (thin flat ball grid array), offering robust performance with a parallel interface. Ideal for advanced computing and demanding data processing tasks, this memory component ensures enhanced throughput and efficiency, critical for B2B customers looking to scale up their electronic solutions.

AS4C32M16D2-25BINTR Features

This DRAM IC provides a substantial memory resource with a density of 512Mbit, structured in a 32M x 16 configuration. Operating at a nominal speed of 2.5ns, it offers high-speed data access, crucial for performance-critical applications. The 84TFBGA package not only minimizes the space occupied on printed circuit boards but also facilitates better thermal management and reduced power consumption. The parallel interface ensures compatibility with a wide range of existing technologies, making it a versatile choice for integrating into various electronic systems.

AS4C32M16D2-25BINTR Applications

  • Computing Systems: Utilized in desktops, laptops, and servers where large volumes of data processing and high-speed memory are crucial.
  • Consumer Electronics: Embedded in devices such as high-definition televisions and gaming consoles, enhancing processing power and the ability to handle intensive graphics and user inputs simultaneously.
  • Telecommunications: Critical for data-intensive applications in networking equipment, where speed and data integrity are essential for system reliability and connectivity.
  • Automotive Electronics: Applied in advanced driver-assistance systems (ADAS) and infotainment systems, requiring robust memory solutions that support real-time data processing and responsiveness.
  • Industrial Systems: Integrated into automation controllers and IoT devices, offering the necessary memory capacity and speed for complex computations and control tasks in industrial environments.
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