AS4C32M16D2-25BINTR
- Mfr.Part #
- AS4C32M16D2-25BINTR
- Manufacturer
- Alliance Memory, Inc.
- Package / Case
- 84-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 84TFBGA
- Stock
- 43,764
- In Stock :
- 43,764
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- Manufacturer :
- Alliance Memory, Inc.
- Product Category :
- Memory
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Operating Supply Voltage :
- 1.8V
- Radiation Hardening :
- No
- Memory Size :
- 512Mb 32M x 16
- Output Characteristics :
- 3-STATE
- Memory Format :
- DRAM
- Operating Temperature :
- -40°C~95°C TC
- Packaging :
- Tape and Reel (TR)
- Write Cycle Time - Word, Page :
- 15ns
- Density :
- 512 Mb
- Access Time :
- 400ps
- Interleaved Burst Length :
- 48
- Mounting Type :
- Surface Mount
- Memory Width :
- 16
- Number of Pins :
- 84
- Package / Case :
- 84-TFBGA
- Data Bus Width :
- 16b
- RoHS Status :
- RoHS Compliant
- Voltage - Supply :
- 1.7V~1.9V
- Supply Current-Max :
- 0.2mA
- Sequential Burst Length :
- 48
- Organization :
- 32MX16
- Refresh Cycles :
- 8192
- Lead Free :
- Lead Free
- I/O Type :
- COMMON
- Surface Mount :
- yes
- Address Bus Width :
- 13b
- Memory Interface :
- Parallel
- Standby Current-Max :
- 0.008A
- Clock Frequency :
- 400MHz
- Terminal Position :
- BOTTOM
- Published :
- 2013
- Terminal Pitch :
- 0.8mm
- Number of Terminations :
- 84
- Memory Type :
- Volatile
- Supply Voltage :
- 1.8V
- Datasheets
- AS4C32M16D2-25BINTR

Memory Alliance Memory, Inc. AS4C32M16D2-25BINTR Overview
The Memory Alliance Memory, Inc. AS4C32M16D2-25BINTR is a high-capacity, dynamic random-access memory (DRAM) designed for applications requiring fast and reliable data storage and retrieval. This IC DRAM module features a 512Mbit density and is packaged in a compact 84TFBGA (thin flat ball grid array), offering robust performance with a parallel interface. Ideal for advanced computing and demanding data processing tasks, this memory component ensures enhanced throughput and efficiency, critical for B2B customers looking to scale up their electronic solutions.
AS4C32M16D2-25BINTR Features
This DRAM IC provides a substantial memory resource with a density of 512Mbit, structured in a 32M x 16 configuration. Operating at a nominal speed of 2.5ns, it offers high-speed data access, crucial for performance-critical applications. The 84TFBGA package not only minimizes the space occupied on printed circuit boards but also facilitates better thermal management and reduced power consumption. The parallel interface ensures compatibility with a wide range of existing technologies, making it a versatile choice for integrating into various electronic systems.
AS4C32M16D2-25BINTR Applications
- Computing Systems: Utilized in desktops, laptops, and servers where large volumes of data processing and high-speed memory are crucial.
- Consumer Electronics: Embedded in devices such as high-definition televisions and gaming consoles, enhancing processing power and the ability to handle intensive graphics and user inputs simultaneously.
- Telecommunications: Critical for data-intensive applications in networking equipment, where speed and data integrity are essential for system reliability and connectivity.
- Automotive Electronics: Applied in advanced driver-assistance systems (ADAS) and infotainment systems, requiring robust memory solutions that support real-time data processing and responsiveness.
- Industrial Systems: Integrated into automation controllers and IoT devices, offering the necessary memory capacity and speed for complex computations and control tasks in industrial environments.
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