AS4C16M16D1-5TCNTR

Manufacturer :

Alliance Memory, Inc.

Product Category :

Memory

Radiation Hardening :

No

Height Seated (Max) :

1.2mm

Density :

256 Mb

Address Bus Width :

13b

Write Cycle Time - Word, Page :

15ns

Surface Mount :

yes

Memory Format :

DRAM

Number of Terminations :

66

Memory Width :

16

Terminal Position :

Dual

Operating Supply Voltage :

2.5V

ECCN Code :

EAR99

Published :

2013

Supply Voltage :

2.5V

Memory Interface :

Parallel

Number of Pins :

66

Number of Functions :

1

Terminal Finish :

PURE MATTE TIN/TIN BISMUTH

Additional Feature :

AUTO/SELF REFRESH

HTS Code :

8542.32.00.24

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Voltage - Supply :

2.3V~2.7V

Organization :

16MX16

Supply Voltage-Max (Vsup) :

2.7V

Time@Peak Reflow Temperature-Max (s) :

40

Access Time :

700ps

Length :

22.22mm

JESD-609 Code :

e3/e6

Memory Type :

Volatile

Terminal Pitch :

0.65mm

Packaging :

Tape and Reel (TR)

Supply Voltage-Min (Vsup) :

2.3V

Data Bus Width :

16b

Mounting Type :

Surface Mount

Pbfree Code :

yes

Operating Temperature :

0°C~70°C TA

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Number of Ports :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Size :

256Mb 16M x 16

Clock Frequency :

200MHz

Pin Count :

66