AS4C16M16D1-5BCN

Manufacturer :

Alliance Memory, Inc.

Product Category :

Memory

Voltage - Supply :

2.3V~2.7V

Memory Type :

Volatile

Peak Reflow Temperature (Cel) :

260

Access Time :

700ps

Qualification Status :

Not Qualified

Sequential Burst Length :

248

Memory Interface :

Parallel

Write Cycle Time - Word, Page :

15ns

Packaging :

Tray

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Factory Lead Time :

8 Weeks

Address Bus Width :

13b

ECCN Code :

EAR99

Additional Feature :

AUTO/SELF REFRESH

Organization :

16MX16

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

SYNCHRONOUS

Published :

2013

Mounting Type :

Surface Mount

Surface Mount :

yes

Number of Ports :

1

RoHS Status :

ROHS3 Compliant

Supply Voltage-Max (Vsup) :

2.7V

Memory Size :

256Mb 16M x 16

Length :

13mm

Refresh Cycles :

8192

I/O Type :

COMMON

Number of Pins :

60

Operating Temperature :

0°C~70°C TA

Pbfree Code :

yes

HTS Code :

8542.32.00.24

Height Seated (Max) :

1.2mm

Output Characteristics :

3-STATE

Operating Supply Voltage :

2.5V

Interleaved Burst Length :

248

Pin Count :

60

Memory Format :

DRAM

Supply Voltage-Min (Vsup) :

2.3V

Standby Current-Max :

0.04A

Package / Case :

60-TFBGA

Terminal Position :

BOTTOM

Number of Functions :

1

Number of Terminations :

60

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Width :

16

Terminal Pitch :

1mm

Clock Frequency :

200MHz

Supply Current-Max :

0.235mA

Supply Voltage :

2.5V

Density :

256 Mb

JESD-609 Code :

e1