71V35761SA166BGG

Manufacturer :

Renesas Electronics Corporation

Product Category :

Memory

Published :

2009

Voltage - Supply :

3.135 V ~ 3.465 V

Min Supply Voltage :

3.135V

Frequency :

166MHz

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Radiation Hardening :

No

I/O Type :

COMMON

Terminal Position :

BOTTOM

Supply Voltage :

3.3V

Memory Format :

SRAM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Interface :

Parallel

Max Operating Temperature :

70°C

Max Supply Voltage :

3.465V

Write Cycle Time - Word, Page :

--

RoHS Status :

RoHS Compliant

Number of Functions :

1

Memory Type :

RAM, SDR, SRAM

Memory Size :

576kB

Terminal Form :

Ball

Width :

22mm

Output Characteristics :

3-STATE

JESD-609 Code :

e1

Additional Feature :

PIPELINED ARCHITECTURE

Packaging :

Tray

Operating Temperature :

0°C ~ 70°C (TA)

Lead Free :

Lead Free

Mount :

Surface Mount

Thickness :

2.15mm

Temperature Grade :

COMMERCIAL

Pin Count :

119

Min Operating Temperature :

0°C

Length :

14mm

Package / Case :

BGA

Base Part Number :

IDT71V35761

Pbfree Code :

yes

Number of Pins :

119

Density :

4.5 Mb

Sync/Async :

SYNCHRONOUS

Peak Reflow Temperature (Cel) :

260

Operating Supply Voltage :

3.3V

Clock Frequency :

166MHz

Access Time :

3.5 ns

Address Bus Width :

17b

Supplier Device Package :

119-PBGA (14x22)

Frequency (Max) :

166MHz

Mounting Type :

Surface Mount

Memory Interface :

Parallel

Standby Current-Max :

0.03A

Nominal Supply Current :

320mA

Word Size :

36b

Series :

--

Height Seated (Max) :

2.36mm

Time@Peak Reflow Temperature-Max (s) :

30

Number of Ports :

1

Factory Lead Time :

7 Weeks

Number of Terminations :

119