70V9279S12PRF8

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Mfr.Part #
70V9279S12PRF8
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
TQFP
Datasheet
Download
Description
IC SRAM 512KBIT PARALLEL 128TQFP
Stock
23,986
In Stock :
23,986

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Memory
Memory Size :
64KB
Access Time :
12 ns
Additional Feature :
FLOW-THROUGH OR PIPELINED ARCHITECTURE
Sync/Async :
SYNCHRONOUS
Word Size :
16b
Supply Voltage :
3.3V
Max Supply Voltage :
3.6V
Terminal Pitch :
0.5mm
Pin Count :
128
Width :
14mm
Max Operating Temperature :
70°C
Interface :
Parallel
I/O Type :
COMMON
Height Seated (Max) :
1.6mm
Number of Pins :
128
Standby Current-Max :
0.005A
Memory Type :
RAM, SDR, SRAM
Address Bus Width :
15b
Density :
512 kb
Package / Case :
TQFP
Nominal Supply Current :
240mA
Mount :
Surface Mount
Number of Functions :
1
Factory Lead Time :
7 Weeks
Thickness :
1.4mm
Length :
20mm
Operating Supply Voltage :
3.3V
Terminal Form :
Gull wing
Min Supply Voltage :
3V
Pbfree Code :
No
Number of Terminations :
128
Published :
2008
Peak Reflow Temperature (Cel) :
225
Terminal Finish :
Tin/Lead (Sn85Pb15)
Output Characteristics :
3-STATE
Terminal Position :
QUAD
Radiation Hardening :
No
Min Operating Temperature :
0°C
JESD-609 Code :
e0
RoHS Status :
RoHS Compliant
Standby Voltage-Min :
3V
Lead Free :
Contains Lead
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Temperature Grade :
COMMERCIAL
Number of Ports :
2
Frequency :
33.3MHz
Datasheets
70V9279S12PRF8
Introducing Memory Intersil (Renesas Electronics Corporation) 70V9279S12PRF8 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:128, Package / Case:TQFP, Number of Terminations:128, 70V9279S12PRF8 pinout, 70V9279S12PRF8 datasheet PDF, 70V9279S12PRF8 amp .Beyond Memory Intersil (Renesas Electronics Corporation) 70V9279S12PRF8 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) 70V9279S12PRF8


Memory Intersil (Renesas Electronics Corporation) 70V9279S12PRF8 Overview

The Memory Intersil (Renesas Electronics Corporation) 70V9279S12PRF8 is a high-performance IC SRAM component designed for applications requiring a robust data storage solution. This 512KBIT SRAM offers a parallel interface encapsulated in a compact 128TQFP package, ensuring high-speed data access and reliability. Ideal for demanding industrial applications, this memory module is engineered to handle extensive read/write cycles while maintaining data integrity and speed. The integration of advanced technology from Intersil, now part of Renesas Electronics Corporation, enhances system reliability and performance, making it a prime choice for developers and engineers looking for efficient and scalable memory solutions.

70V9279S12PRF8 Features

This SRAM module boasts several key features that make it a competitive choice for complex electronics systems. It offers a large storage capacity of 512KBIT and utilizes a parallel communication interface to maximize throughput and minimize latency. The 128TQFP packaging not only facilitates easier integration into existing designs but also ensures robustness and durability under varied environmental conditions. Additionally, its low power consumption makes it suitable for power-sensitive applications.

70V9279S12PRF8 Applications

  • Advanced Computing Systems: Utilized for its high-speed data retrieval and storage capabilities, essential in server and high-performance computing scenarios.
  • Industrial Automation: Acts as a reliable data buffer in complex machinery control systems, ensuring seamless process execution.
  • Telecommunications Equipment: Provides the necessary speed and capacity for data handling in communication infrastructure, supporting robust network operations.
  • Automotive Electronics: Enhances functionality in automotive systems, where durable and fast memory is crucial for vehicle control units.
  • Aerospace and Defense: Suitable for applications requiring high reliability and data integrity under extreme conditions.
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