70V3579S4DR
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- Mfr.Part #
- 70V3579S4DR
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- PQFP
- Datasheet
- Download
- Description
- IC SRAM 1.125MBIT PAR 208PQFP
- Stock
- 43,139
- In Stock ：
- 43,139
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Memory
- Peak Reflow Temperature (Cel) :
- 225
- Supply Voltage :
- 3.3V
- Thickness :
- 3.5mm
- Temperature Grade :
- COMMERCIAL
- Lead Free :
- Contains Lead
- Address Bus Width :
- 30b
- Output Characteristics :
- 3-STATE
- Factory Lead Time :
- 7 Weeks
- Package / Case :
- PQFP
- Max Supply Voltage :
- 3.45V
- Terminal Pitch :
- 0.5mm
- Interface :
- Parallel
- Min Supply Voltage :
- 3.15V
- Density :
- 1.1 Mb
- Width :
- 28mm
- Max Operating Temperature :
- 70°C
- Pbfree Code :
- No
- Terminal Position :
- QUAD
- Word Size :
- 36b
- Memory Size :
- 128kB
- Length :
- 28mm
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Operating Supply Voltage :
- 3.3V
- Access Time :
- 7.5 ns
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Nominal Supply Current :
- 460mA
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 208
- Frequency :
- 133MHz
- Min Operating Temperature :
- 0°C
- Mount :
- Surface Mount
- Memory Type :
- RAM, SDR, SRAM
- Number of Pins :
- 208
- Number of Terminations :
- 208
- I/O Type :
- COMMON
- JESD-609 Code :
- e0
- Published :
- 2009
- Number of Functions :
- 1
- Sync/Async :
- SYNCHRONOUS
- Number of Ports :
- 2
- Datasheets
- 70V3579S4DR
Memory Intersil (Renesas Electronics Corporation) 70V3579S4DR Overview
The Memory Intersil (Renesas Electronics Corporation) 70V3579S4DR is a high-performance IC SRAM designed to meet the demanding requirements of advanced computing and high-speed data processing systems. This 1.125 Mbit SRAM, housed in a 208PQFP package, combines speed with reliability, making it an ideal choice for applications requiring quick access to large volumes of data. The product is crafted by Intersil, now part of Renesas Electronics Corporation, a leader in the semiconductor space known for innovative design and state-of-the-art manufacturing practices.
70V3579S4DR Features
The 70V3579S4DR SRAM features a parallel interface, allowing for fast data transfer rates that are crucial in performance-intensive applications. Its 1.125 Mbit storage capacity provides ample space for temporary data storage in complex processing tasks. The compact 208PQFP packaging ensures that this powerful memory chip can be integrated into a variety of electronic systems without compromising on space.
70V3579S4DR Applications
- Advanced Computing Systems: Utilized in servers and high-performance computers where quick data retrieval and high-speed processing are paramount.
- Networking Equipment: Critical for data buffering in routers, switches, and networking hubs to manage high-speed data flows efficiently.
- Telecommunications Infrastructure: Supports fast and reliable access to buffer memory in telecommunications equipment, enhancing signal processing capabilities.
- Industrial Automation: Plays a key role in control systems where rapid access to data is necessary for real-time processing and decision-making.
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