70V261L25PFI8

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Mfr.Part #
70V261L25PFI8
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
TQFP
Datasheet
Download
Description
IC SRAM 256KBIT PARALLEL 100TQFP
Stock
37,193
In Stock :
37,193

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Memory
Peak Reflow Temperature (Cel) :
240
Pin Count :
100
Memory Size :
32kB
JESD-609 Code :
e0
Max Supply Voltage :
3.6V
Width :
14mm
Thickness :
1.4mm
Interface :
Parallel
ECCN Code :
EAR99
Number of Terminations :
100
Operating Supply Voltage :
3.3V
Time@Peak Reflow Temperature-Max (s) :
20
Access Time :
25 ns
Output Characteristics :
3-STATE
Height Seated (Max) :
1.6mm
Terminal Position :
QUAD
Additional Feature :
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN
Number of Functions :
1
Surface Mount :
yes
Length :
14mm
Package / Case :
TQFP
Min Operating Temperature :
-40°C
Max Operating Temperature :
85°C
Address Bus Width :
28b
I/O Type :
COMMON
Terminal Pitch :
0.5mm
Lead Free :
Contains Lead
Terminal Finish :
Tin/Lead (Sn85Pb15)
RoHS Status :
RoHS Compliant
Temperature Grade :
Industrial
Number of Ports :
2
Number of Pins :
100
Pbfree Code :
No
Standby Voltage-Min :
3V
Standby Current-Max :
0.003A
Supply Current-Max :
0.185mA
Terminal Form :
Gull wing
Factory Lead Time :
7 Weeks
Memory Type :
RAM, SDR, SRAM
Organization :
16KX16
Density :
256 kb
Min Supply Voltage :
3V
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Published :
2001
Radiation Hardening :
No
Supply Voltage :
3.3V
Datasheets
70V261L25PFI8
Introducing Memory Intersil (Renesas Electronics Corporation) 70V261L25PFI8 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:100, Package / Case:TQFP, Number of Pins:100, 70V261L25PFI8 pinout, 70V261L25PFI8 datasheet PDF, 70V261L25PFI8 amp .Beyond Memory Intersil (Renesas Electronics Corporation) 70V261L25PFI8 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) 70V261L25PFI8


Memory Intersil (Renesas Electronics Corporation) 70V261L25PFI8 Overview

The Memory Intersil (Renesas Electronics Corporation) 70V261L25PFI8 IC is a cutting-edge static random-access memory (SRAM) device offering a substantial 256 Kbit storage capacity, optimized for high-speed, reliable performance across a wide range of industrial and commercial applications. Enclosed in a compact 100-pin TQFP (thin quad flat package), this SRAM integrates seamlessly into various electronic assemblies, making it an ideal choice for designers looking to balance footprint with performance. Its robust design ensures exceptional durability and operational stability, positioning it as a preferred component for high-demand environments.

70V261L25PFI8 Features

This IC SRAM from Intersil (Renesas Electronics Corporation) not only boasts a significant memory capacity but also excels in its parallel interface, ensuring rapid data access and processing speeds that are crucial for performance-critical applications. Its compatibility with a wide voltage range around 3.3V to 5V provides versatile power integration options, further enhancing its appeal in diverse electronic configurations.

70V261L25PFI8 Applications

  • Networking Equipment: Utilized in routers and switches for packet buffering, the 70V261L25PFI8 ensures efficient data flow and high-speed internet connectivity.
  • Industrial Automation: Supports the complex computational needs of automated systems by providing reliable, quick-access memory for process control applications.
  • Telecommunications: Plays a crucial role in telecom infrastructure by facilitating high-speed data transmission and signal processing capabilities.
  • Automotive Electronics: Enhances functionality in automotive systems by storing critical control algorithms needed for vehicle safety and performance.
  • Consumer Electronics: Applied in various consumer devices, such as digital cameras and gaming consoles, to improve user experience through enhanced processing power and speed.
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