30C02CH-TL-E
- Mfr.Part #
- 30C02CH-TL-E
- Manufacturer
- onsemi
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.7A 3CPH
- Stock
- 2,001
- In Stock :
- 2,001
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Collector Emitter Breakdown Voltage :
- 30V
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 2 Weeks
- Transition Frequency :
- 540MHz
- Length :
- 2.9mm
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 700mA
- hFE Min :
- 300
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Height :
- 900μm
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Base Voltage (VCBO) :
- 40V
- ECCN Code :
- EAR99
- Max Frequency :
- 540MHz
- Collector Emitter Saturation Voltage :
- 850mV
- Gain Bandwidth Product :
- 540MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 50mA 2V
- Width :
- 1.6mm
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e6
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Collector Current :
- 700mA
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Published :
- 2003
- Element Configuration :
- Single
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 700mW
- Vce Saturation (Max) @ Ib, Ic :
- 190mV @ 10mA, 200mA
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SC-96
- Datasheets
- 30C02CH-TL-E

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-96 Tape & Reel (TR) Surface Mount
30C02CH-TL-E Overview
This device has a DC current gain of 300 @ 50mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 850mV.A VCE saturation (Max) of 190mV @ 10mA, 200mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 540MHz.A maximum collector current of 700mA volts is possible.
30C02CH-TL-E Features
the DC current gain for this device is 300 @ 50mA 2V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 190mV @ 10mA, 200mA
the emitter base voltage is kept at 5V
a transition frequency of 540MHz
30C02CH-TL-E Applications
There are a lot of ON Semiconductor
30C02CH-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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