2STD1360T4
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- Mfr.Part #
- 2STD1360T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A DPAK
- Stock
- 20,405
- In Stock ：
- 20,405
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Power Dissipation :
- 15W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 15W
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- Case Connection :
- COLLECTOR
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 80
- Frequency :
- 130MHz
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- 2STD1360
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 130MHz
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 150mA, 3A
- Collector Base Voltage (VCBO) :
- 80V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Max Collector Current :
- 3A
- Transition Frequency :
- 130MHz
- Number of Terminations :
- 2
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Datasheets
- 2STD1360T4
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NPN 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2STD1360T4 Overview
In this device, the DC current gain is 160 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 150mA, 3A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
2STD1360T4 Features
the DC current gain for this device is 160 @ 1A 2V
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz
2STD1360T4 Applications
There are a lot of STMicroelectronics
2STD1360T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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