2STD1360T4
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- Mfr.Part #
- 2STD1360T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A DPAK
- Stock
- 20,405
- In Stock ：
- 20,405
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 130MHz
- Mount :
- Surface Mount
- Max Power Dissipation :
- 15W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 150mA, 3A
- JESD-609 Code :
- e3
- Power Dissipation :
- 15W
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- COLLECTOR
- Base Part Number :
- 2STD1360
- Transistor Type :
- NPN
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Max Collector Current :
- 3A
- Max Breakdown Voltage :
- 60V
- Transition Frequency :
- 130MHz
- Number of Terminations :
- 2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 80
- Frequency :
- 130MHz
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Breakdown Voltage :
- 60V
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2STD1360T4
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NPN 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2STD1360T4 Overview
In this device, the DC current gain is 160 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 150mA, 3A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
2STD1360T4 Features
the DC current gain for this device is 160 @ 1A 2V
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz
2STD1360T4 Applications
There are a lot of STMicroelectronics
2STD1360T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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