2STD1360T4
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- Mfr.Part #
- 2STD1360T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A DPAK
- Stock
- 20,405
- In Stock ：
- 20,405
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Base Part Number :
- 2STD1360
- Max Collector Current :
- 3A
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 150mA, 3A
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- hFE Min :
- 80
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Max Power Dissipation :
- 15W
- Power Dissipation :
- 15W
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Pin Count :
- 3
- Transition Frequency :
- 130MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Frequency :
- 130MHz
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 60V
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 130MHz
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Base Voltage (VCBO) :
- 80V
- Datasheets
- 2STD1360T4
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NPN 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2STD1360T4 Overview
In this device, the DC current gain is 160 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 150mA, 3A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
2STD1360T4 Features
the DC current gain for this device is 160 @ 1A 2V
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz
2STD1360T4 Applications
There are a lot of STMicroelectronics
2STD1360T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| 2STD1665T4 | STMicroelectronics | 2,500 | TRANS NPN 65V 6A DPAK |
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