2STC4467

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Mfr.Part #
2STC4467
Manufacturer
STMicroelectronics
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
TRANS NPN 120V 8A TO3P
Stock
612
In Stock :
612

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Transition Frequency :
20MHz
Power Dissipation :
80W
Lead Free :
Lead Free
Polarity/Channel Type :
NPN
Collector Emitter Voltage (VCEO) :
120V
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Collector Base Voltage (VCBO) :
120V
Frequency :
20MHz
Package / Case :
TO-3P-3, SC-65-3
Number of Pins :
3
Transistor Application :
SWITCHING
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
30
Mounting Type :
Through Hole
Transistor Type :
NPN
Max Breakdown Voltage :
120V
Max Collector Current :
8A
ECCN Code :
EAR99
Number of Elements :
1
Max Power Dissipation :
80W
RoHS Status :
ROHS3 Compliant
Emitter Base Voltage (VEBO) :
6V
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 300mA, 3A
Pin Count :
3
Current - Collector Cutoff (Max) :
10μA ICBO
Peak Reflow Temperature (Cel) :
260
Operating Temperature :
150°C TJ
Packaging :
Tube
Gain Bandwidth Product :
20MHz
Base Part Number :
2STC
Element Configuration :
Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 3A 4V
Radiation Hardening :
No
Terminal Finish :
Matte Tin (Sn)
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
120V
Datasheets
2STC4467
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics 2STC4467 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Base Part Number:2STC, 2STC4467 pinout, 2STC4467 datasheet PDF, 2STC4467 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics 2STC4467 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics 2STC4467


NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3, SC-65-3 Tube Through Hole

2STC4467 Overview


In this device, the DC current gain is 70 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 300mA, 3A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.20MHz is present in the transition frequency.An input voltage of 120V volts is the breakdown voltage.Maximum collector currents can be below 8A volts.

2STC4467 Features


the DC current gain for this device is 70 @ 3A 4V
the vce saturation(Max) is 1.5V @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 20MHz


2STC4467 Applications


There are a lot of STMicroelectronics
2STC4467 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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