2STC4467
- Mfr.Part #
- 2STC4467
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 8A TO3P
- Stock
- 612
- In Stock :
- 612
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Transition Frequency :
- 20MHz
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 8A
- Pin Count :
- 3
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tube
- Element Configuration :
- Single
- Package / Case :
- TO-3P-3, SC-65-3
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 300mA, 3A
- Terminal Finish :
- Matte Tin (Sn)
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Voltage (VCEO) :
- 120V
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 80W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 3A 4V
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 20MHz
- Mounting Type :
- Through Hole
- Max Breakdown Voltage :
- 120V
- Base Part Number :
- 2STC
- Number of Pins :
- 3
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 20MHz
- Power Dissipation :
- 80W
- Collector Emitter Breakdown Voltage :
- 120V
- Collector Base Voltage (VCBO) :
- 120V
- JESD-609 Code :
- e3
- Datasheets
- 2STC4467
2STC4467 Documents

NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3, SC-65-3 Tube Through Hole
2STC4467 Overview
In this device, the DC current gain is 70 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 300mA, 3A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.20MHz is present in the transition frequency.An input voltage of 120V volts is the breakdown voltage.Maximum collector currents can be below 8A volts.
2STC4467 Features
the DC current gain for this device is 70 @ 3A 4V
the vce saturation(Max) is 1.5V @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 20MHz
2STC4467 Applications
There are a lot of STMicroelectronics
2STC4467 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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