2STC4467

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Mfr.Part #
2STC4467
Manufacturer
STMicroelectronics
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
TRANS NPN 120V 8A TO3P
Stock
612
In Stock :
612

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Power Dissipation :
80W
Packaging :
Tube
Number of Pins :
3
Transistor Type :
NPN
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
2STC
Time@Peak Reflow Temperature-Max (s) :
30
Number of Terminations :
3
Current - Collector Cutoff (Max) :
10μA ICBO
Operating Temperature :
150°C TJ
Transition Frequency :
20MHz
Emitter Base Voltage (VEBO) :
6V
Element Configuration :
Single
Max Breakdown Voltage :
120V
Max Power Dissipation :
80W
Collector Base Voltage (VCBO) :
120V
ECCN Code :
EAR99
Frequency :
20MHz
Collector Emitter Breakdown Voltage :
120V
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
260
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 300mA, 3A
Mounting Type :
Through Hole
Polarity/Channel Type :
NPN
Lead Free :
Lead Free
Number of Elements :
1
Gain Bandwidth Product :
20MHz
Pin Count :
3
Terminal Finish :
Matte Tin (Sn)
Radiation Hardening :
No
Max Collector Current :
8A
JESD-609 Code :
e3
Mount :
Through Hole
Package / Case :
TO-3P-3, SC-65-3
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 3A 4V
Collector Emitter Voltage (VCEO) :
120V
Datasheets
2STC4467
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics 2STC4467 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:2STC, Number of Terminations:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, 2STC4467 pinout, 2STC4467 datasheet PDF, 2STC4467 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics 2STC4467 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics 2STC4467


NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3, SC-65-3 Tube Through Hole

2STC4467 Overview


In this device, the DC current gain is 70 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 300mA, 3A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.20MHz is present in the transition frequency.An input voltage of 120V volts is the breakdown voltage.Maximum collector currents can be below 8A volts.

2STC4467 Features


the DC current gain for this device is 70 @ 3A 4V
the vce saturation(Max) is 1.5V @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 20MHz


2STC4467 Applications


There are a lot of STMicroelectronics
2STC4467 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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