2STBN15D100
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- Mfr.Part #
- 2STBN15D100
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A D2PAK
- Stock
- 9,161
- In Stock ：
- 9,161
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Additional Feature :
- BUILT-IN BIAS RESISTOR
- Collector Base Voltage (VCBO) :
- 100V
- Radiation Hardening :
- No
- Factory Lead Time :
- 8 Weeks
- REACH SVHC :
- No SVHC
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Polarity :
- NPN
- Current - Collector Cutoff (Max) :
- 100μA
- Collector Emitter Breakdown Voltage :
- 100V
- Max Collector Current :
- 12A
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 70W
- Continuous Collector Current :
- 12A
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 1.5V
- Element Configuration :
- Single
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 4mA, 4A
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 100V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 245
- Transistor Type :
- NPN - Darlington
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Base Part Number :
- 2STBN15
- ECCN Code :
- EAR99
- hFE Min :
- 750
- Weight :
- 2.000002g
- Datasheets
- 2STBN15D100
NPN - Darlington 150°C TJ 100μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
2STBN15D100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.3V @ 4mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 12A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 12A volts can be achieved.
2STBN15D100 Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.3V @ 4mA, 4A
the emitter base voltage is kept at 5V
2STBN15D100 Applications
There are a lot of STMicroelectronics
2STBN15D100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| 2STBN15D100T4 | STMicroelectronics | 33,942 | TRANS NPN DARL 100V 12A D2PAK |
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