2STBN15D100

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

100V

Weight :

2.000002g

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Polarity :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

100V

Number of Pins :

3

hFE Min :

750

Collector Emitter Breakdown Voltage :

100V

Pin Count :

3

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

245

Base Part Number :

2STBN15

Case Connection :

COLLECTOR

Continuous Collector Current :

12A

Vce Saturation (Max) @ Ib, Ic :

1.3V @ 4mA, 4A

Collector Emitter Saturation Voltage :

1.5V

Transistor Type :

NPN - Darlington

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

ECCN Code :

EAR99

Max Collector Current :

12A

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 3A 3V

Number of Terminations :

2

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

100μA

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

Additional Feature :

BUILT-IN BIAS RESISTOR

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Collector Base Voltage (VCBO) :

100V

Number of Elements :

1

Lead Free :

Lead Free

Max Power Dissipation :

70W