2STBN15D100
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- Mfr.Part #
- 2STBN15D100
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A D2PAK
- Stock
- 9,161
- In Stock ：
- 9,161
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- 2STBN15
- Peak Reflow Temperature (Cel) :
- 245
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 1.5V
- Max Breakdown Voltage :
- 100V
- Pin Count :
- 3
- hFE Min :
- 750
- Collector Base Voltage (VCBO) :
- 100V
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 4mA, 4A
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 100V
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Current - Collector Cutoff (Max) :
- 100μA
- Emitter Base Voltage (VEBO) :
- 5V
- Continuous Collector Current :
- 12A
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 12A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Max Power Dissipation :
- 70W
- JESD-30 Code :
- R-PSSO-G2
- Polarity :
- NPN
- Factory Lead Time :
- 8 Weeks
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Transistor Type :
- NPN - Darlington
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Additional Feature :
- BUILT-IN BIAS RESISTOR
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Weight :
- 2.000002g
- Collector Emitter Voltage (VCEO) :
- 100V
- Datasheets
- 2STBN15D100
NPN - Darlington 150°C TJ 100μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
2STBN15D100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.3V @ 4mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 12A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 12A volts can be achieved.
2STBN15D100 Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.3V @ 4mA, 4A
the emitter base voltage is kept at 5V
2STBN15D100 Applications
There are a lot of STMicroelectronics
2STBN15D100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| 2STBN15D100T4 | STMicroelectronics | 33,942 | TRANS NPN DARL 100V 12A D2PAK |
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