2STA1962
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- Mfr.Part #
- 2STA1962
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS PNP 230V 15A TO3P
- Stock
- 8,244
- In Stock ：
- 8,244
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 15.8mm
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 230V
- Collector Base Voltage (VCBO) :
- 230V
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- PNP
- Frequency :
- 30MHz
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Collector Emitter Saturation Voltage :
- 3V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Power - Max :
- 150W
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Height :
- 18.7mm
- Max Breakdown Voltage :
- 230V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 5V
- Packaging :
- Tube
- Number of Elements :
- 1
- Max Power Dissipation :
- 130W
- Lead Free :
- Lead Free
- Max Collector Current :
- 15A
- Transition Frequency :
- 30MHz
- Collector Emitter Voltage (VCEO) :
- 230V
- Gain Bandwidth Product :
- 30MHz
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-3P-3, SC-65-3
- Pin Count :
- 3
- hFE Min :
- 80
- Base Part Number :
- 2STA
- Width :
- 5mm
- Power Dissipation :
- 130W
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Datasheets
- 2STA1962
PNP 150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON PNP TO-3P-3, SC-65-3 Tube Through Hole
2STA1962 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 1A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 800mA, 8A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 30MHz.The breakdown input voltage is 230V volts.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
2STA1962 Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz
2STA1962 Applications
There are a lot of STMicroelectronics
2STA1962 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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